GaN Devices Market (Power, Opto Semiconductor & Other) by Manufacturers, Regions, Type and Application, Forecast to 2023
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MarketResearchNest.com adds “Global GaN Devices Market 2018 by Manufacturers, Regions, Type and Application, Forecast to 2023” new reports
PUNE, INDIA, August 31, 2018 /EINPresswire.com/ -- MarketResearchNest.com adds “Global GaN Devices Market 2018 by Manufacturers, Regions, Type and Application, Forecast to 2023” new reports to its research database. The report spread across 148 pages with tables and figures in it.
GaN has superior properties than silicon such as high breakdown voltage and saturation velocity. The bandgap in GaN is almost thrice the bandgap of silicon. Thus, GaN has the ability to improve power conversion efficiencies, raise power density levels, extend battery lives, and accelerate switching speeds in different end-user segments such as consumer electronics products, telecommunications hardware, electric vehicles, or domestic appliances.
This report focuses on the GaN Devices in global market, especially in North America, Europe and Asia-Pacific, South America, Middle East and Africa. This report categorizes the market based on manufacturers, regions, type and application.
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According to this market research and analysis, the opto semiconductor segment accounted for the maximum shares and dominated the market. The increasing adoption of GaN opto-semiconductors by various sectors such as military, aerospace and defense, and consumer electronics, will drive the growth of the market in the next few years.
The worldwide market for GaN Devices is expected to grow at a CAGR of roughly xx% over the next five years, will reach xx million US$ in 2023, from xx million US$ in 2017, according to a new GIR (Global Info Research) study.
Market Segment by Manufacturers, this report covers
Fujitsu
Toshiba
Koninklijke Philips
Texas Instruments
EPIGAN
NTT Advanced Technology
RF Micro Devices
Cree Incorporated
Avago Technologies
GaN Systems
Infineon Technologies
OSRAM Opto Semiconductors
Qorvo
Aixtron
Nichia
NXP Semiconductors
Panasonic Semiconductors
International Quantum Epitaxy (IQE)
Mitsubishi Chemical
AZZURO Semiconductors
Market Segment by Regions, regional analysis covers
North America (United States, Canada and Mexico)
Europe (Germany, France, UK, Russia and Italy)
Asia-Pacific (China, Japan, Korea, India and Southeast Asia)
South America (Brazil, Argentina, Colombia etc.)
Middle East and Africa (Saudi Arabia, UAE, Egypt, Nigeria and South Africa)
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Market Segment by Type, covers
Power Semiconductor
Opto Semiconductor
Other
Market Segment by Applications, can be divided into
Consumer Electronics
Automotive and Transportation
Industrial Use
Aerospace and Defense
Other
There are 15 Chapters to deeply display the global GaN Devices market.
Chapter 1, to describe GaN Devices Introduction, product scope, market overview, market opportunities, market risk, market driving force;
Chapter 2, to analyze the top manufacturers of GaN Devices, with sales, revenue, and price of GaN Devices, in 2016 and 2017;
Chapter 3, to display the competitive situation among the top manufacturers, with sales, revenue and market share in 2016 and 2017;
Chapter 4, to show the global market by regions, with sales, revenue and market share of GaN Devices, for each region, from 2013 to 2018;
Chapter 5, 6, 7, 8 and 9, to analyze the market by countries, by type, by application and by manufacturers, with sales, revenue and market share by key countries in these regions;
Chapter 10 and 11, to show the market by type and application, with sales market share and growth rate by type, application, from 2013 to 2018;
Chapter 12, GaN Devices market forecast, by regions, type and application, with sales and revenue, from 2018 to 2023;
Chapter 13, 14 and 15, to describe GaN Devices sales channel, distributors, traders, dealers, Research Findings and Conclusion, appendix and data source
Get a Report Details at https://www.marketresearchnest.com/Global-GaN-Devices-Market-2018-by-Manufacturers-Regions-Type-and-Application-Forecast-to-2023.html .
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