Power GaN Device Market to Surpass USD 13.41 Billion by 2030 owing to Consumer Electronics and Automotive Integration

Power GaN Device Market Size, Share, And Segmentation By By Product, By Component, By Wafer Size, By End-Use, By Region, And Segment Forecasts 2023 – 2030

AUSTIN, TEXAS, UNITED STATES, January 12, 2024 /EINPresswire.com/ -- 𝐏𝐨𝐰𝐞𝐫 𝐆𝐚𝐍 𝐃𝐞𝐯𝐢𝐜𝐞 𝐌𝐚𝐫𝐤𝐞𝐭 𝐒𝐜𝐨𝐩𝐞 & 𝐎𝐯𝐞𝐫𝐯𝐢𝐞𝐰

The Power GaN Device Market¹, as per the SNS Insider report, achieved a valuation of USD 2.18 Billion in 2022, with projections indicating a substantial growth to reach USD 13.41 Billion by 2030. Anticipated to exhibit a Compound Annual Growth Rate (CAGR) of 25.5% during the forecast period spanning from 2023 to 2030.

Power Gallium Nitride (GaN) devices represent a cutting-edge advancement in the field of semiconductor technology. GaN, a wide-bandgap material, offers exceptional electrical properties, making it ideal for power electronics applications. These devices are characterized by high electron mobility and a wide bandgap, enabling them to operate at higher frequencies and temperatures compared to traditional silicon-based devices. The main pointers to consider in understanding power GaN devices include their superior power efficiency, faster switching speeds, compact form factor, and their ability to handle high power densities.

𝐆𝐞𝐭 𝐅𝐫𝐞𝐞 𝐒𝐚𝐦𝐩𝐥𝐞 𝐑𝐞𝐩𝐨𝐫𝐭 𝐨𝐟 𝐏𝐨𝐰𝐞𝐫 𝐆𝐚𝐍 𝐃𝐞𝐯𝐢𝐜𝐞 𝐌𝐚𝐫𝐤𝐞𝐭 @ https://www.snsinsider.com/sample-request/2972

𝐊𝐞𝐲 𝐏𝐥𝐚𝐲𝐞𝐫𝐬 𝐂𝐨𝐯𝐞𝐫𝐞𝐝 𝐢𝐧 𝐏𝐨𝐰𝐞𝐫 𝐆𝐚𝐍 𝐃𝐞𝐯𝐢𝐜𝐞 𝐦𝐚𝐫𝐤𝐞𝐭 𝐫𝐞𝐩𝐨𝐫𝐭 𝐚𝐫𝐞:
- GaN Systems Inc.
- Toshiba Corporation
- TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Efficient Power Conversion Corporation Inc.
- FUJITSU Limited
- ON SEMICONDUCTOR CORPORATION
- PANASONIC CORPORATION
- VISIC TECHNOLOGIES LTD.

𝐌𝐚𝐫𝐤𝐞𝐭 𝐀𝐧𝐚𝐥𝐲𝐬𝐢𝐬

The power GaN device market is witnessing robust growth driven by several key factors. Firstly, the increasing demand for energy-efficient electronic devices across industries is pushing the adoption of power GaN devices. Additionally, the rising focus on renewable energy sources and the need for efficient power management contribute to the market's expansion. The proliferation of electric vehicles, the burgeoning 5G infrastructure, and the demand for compact and lightweight power systems further fuel the growth of the market. As industries continue to emphasize energy conservation and high-performance electronics, the market for power GaN devices is poised for sustained expansion.

𝐏𝐨𝐰𝐞𝐫 𝐆𝐚𝐍 𝐃𝐞𝐯𝐢𝐜𝐞 𝐌𝐚𝐫𝐤𝐞𝐭 𝐒𝐞𝐠𝐦𝐞𝐧𝐭𝐚𝐭𝐢𝐨𝐧 𝐚𝐬 𝐅𝐨𝐥𝐥𝐨𝐰𝐬:

𝐁𝐲 𝐏𝐫𝐨𝐝𝐮𝐜𝐭
- GaN Radio Frequency Devices
- Opto-semiconductors
- Power Semiconductors

𝐁𝐲 𝐂𝐨𝐦𝐩𝐨𝐧𝐞𝐧𝐭
- Transistor
- Diode
- Rectifier
- Power IC
- Others

𝐁𝐲 𝐖𝐚𝐟𝐞𝐫 𝐒𝐢𝐳𝐞
- 2-inch
- 4-inch
- 6-inch
- 8-inch

𝐁𝐲 𝐄𝐧𝐝-𝐮𝐬𝐞
- Automotive
- Consumer Electronics
- Defense & Aerospace
- Healthcare
- Industrial & Power
- Information & Communication Technology
- Others

𝐒𝐞𝐠𝐦𝐞𝐧𝐭𝐚𝐭𝐢𝐨𝐧 𝐛𝐲 𝐑𝐞𝐠𝐢𝐨𝐧:
- North America
- Europe
- Asia-Pacific
- The Middle East & Africa
- Latin America

𝐀𝐜𝐜𝐞𝐬𝐬 𝐂𝐨𝐦𝐩𝐥𝐞𝐭𝐞 𝐑𝐞𝐩𝐨𝐫𝐭 𝐃𝐞𝐭𝐚𝐢𝐥𝐬 @ https://www.snsinsider.com/reports/power-gan-device-market-2972

𝐈𝐦𝐩𝐚𝐜𝐭 𝐨𝐟 𝐑𝐞𝐜𝐞𝐬𝐬𝐢𝐨𝐧

The ongoing recession has both positive and negative implications for the power GaN device market. On the positive side, the demand for energy-efficient technologies tends to increase during economic downturns as companies seek cost-effective solutions. Power GaN devices, with their efficiency and compact design, become attractive options for businesses looking to optimize energy consumption and reduce operational costs. However, the negative impact cannot be ignored, as the recession may result in reduced overall spending on technological upgrades and R&D, affecting the market's growth potential. Striking a balance between these opposing forces becomes crucial for stakeholders in the power GaN device industry during times of economic uncertainty.

𝐈𝐦𝐩𝐚𝐜𝐭 𝐨𝐟 𝐑𝐮𝐬𝐬𝐢𝐚-𝐔𝐤𝐫𝐚𝐢𝐧𝐞 𝐖𝐚𝐫

The Russia-Ukraine war has multifaceted effects on the power GaN device market. On one hand, geopolitical tensions and disruptions in the global supply chain may lead to challenges in raw material sourcing and manufacturing processes, potentially causing delays and increased costs. On the other hand, increased investments in defense and infrastructure in response to geopolitical uncertainties may drive the demand for power GaN devices used in military and communication applications. Balancing these contrasting impacts requires a nuanced understanding of the geopolitical landscape and strategic positioning within the market.

𝐊𝐞𝐲 𝐑𝐞𝐠𝐢𝐨𝐧𝐚𝐥 𝐃𝐞𝐯𝐞𝐥𝐨𝐩𝐦𝐞𝐧𝐭

The North American region exhibits a strong appetite for technological advancements, making it a significant player in the power GaN device market. The push for energy-efficient solutions, coupled with robust investments in research and development, positions North America as a key contributor to the market's growth. In Europe, stringent environmental regulations and the increasing adoption of electric vehicles are propelling the demand for power GaN devices. The region's emphasis on sustainable technologies and smart grid infrastructure further enhances the prospects for power GaN device manufacturers. The Asia-Pacific region, driven by countries like China, Japan, and South Korea, dominates the market. Rapid industrialization, a burgeoning consumer electronics market, and investments in 5G infrastructure contribute to the region's dynamic growth in the power GaN device sector.

𝐊𝐞𝐲 𝐓𝐚𝐤𝐞𝐚𝐰𝐚𝐲 𝐟𝐫𝐨𝐦 𝐏𝐨𝐰𝐞𝐫 𝐆𝐚𝐍 𝐃𝐞𝐯𝐢𝐜𝐞 𝐌𝐚𝐫𝐤𝐞𝐭 𝐒𝐭𝐮𝐝𝐲

- Within the power GaN device market, the GaN Radio Frequency (RF) Devices segment is poised to dominate, driven by the increasing demand for high-frequency applications in telecommunications, radar systems, and satellite communications. The superior performance of GaN RF devices in terms of power efficiency and bandwidth positions them as the preferred choice in the evolving landscape of wireless communications.

- Simultaneously, the automotive sector is set to be a major force shaping the market. The shift towards electric vehicles and the integration of advanced driver-assistance systems (ADAS) require efficient power management solutions. Power GaN devices, with their high power density and fast switching capabilities, find extensive applications in electric vehicles, contributing to the dominance of the automotive segment within the broader market.

𝐑𝐞𝐜𝐞𝐧𝐭 𝐃𝐞𝐯𝐞𝐥𝐨𝐩𝐦𝐞𝐧𝐭𝐬 𝐑𝐞𝐥𝐚𝐭𝐞𝐝 𝐭𝐨 𝐏𝐨𝐰𝐞𝐫 𝐆𝐚𝐍 𝐃𝐞𝐯𝐢𝐜𝐞 𝐌𝐚𝐫𝐤𝐞𝐭

- Oki has achieved a significant milestone by successfully implementing Gallium Nitride (GaN) lifting off/bonding technology on QST substrates manufactured by Shin-Etsu Chemical. This collaborative effort marks a substantial leap forward in the field, showcasing the prowess of Oki's innovation and the strategic partnership with Shin-Etsu Chemical.

- Toyoda Gosei and Powdec have unveiled a significant breakthrough in the development of Horizontal Gallium Nitride (GaN) power devices. This collaborative effort signifies a pivotal moment in the evolution of semiconductor technology, with both companies contributing their expertise to advance the capabilities of GaN-based power devices.

𝐓𝐚𝐛𝐥𝐞 𝐨𝐟 𝐂𝐨𝐧𝐭𝐞𝐧𝐭 – 𝐀𝐧𝐚𝐥𝐲𝐬𝐢𝐬 𝐨𝐟 𝐊𝐞𝐲 𝐏𝐨𝐢𝐧𝐭𝐬

𝟏. 𝐈𝐧𝐭𝐫𝐨𝐝𝐮𝐜𝐭𝐢𝐨𝐧
𝟐. 𝐑𝐞𝐬𝐞𝐚𝐫𝐜𝐡 𝐌𝐞𝐭𝐡𝐨𝐝𝐨𝐥𝐨𝐠𝐲
𝟑. 𝐌𝐚𝐫𝐤𝐞𝐭 𝐃𝐲𝐧𝐚𝐦𝐢𝐜𝐬
𝟒. 𝐈𝐦𝐩𝐚𝐜𝐭 𝐀𝐧𝐚𝐥𝐲𝐬𝐢𝐬
𝟓. 𝐕𝐚𝐥𝐮𝐞 𝐂𝐡𝐚𝐢𝐧 𝐀𝐧𝐚𝐥𝐲𝐬𝐢𝐬
𝟔. 𝐏𝐨𝐫𝐭𝐞𝐫’𝐬 𝟓 𝐟𝐨𝐫𝐜𝐞𝐬 𝐦𝐨𝐝𝐞𝐥
𝟕. 𝐏𝐄𝐒𝐓 𝐀𝐧𝐚𝐥𝐲𝐬𝐢𝐬

𝟖. 𝐏𝐨𝐰𝐞𝐫 𝐆𝐚𝐍 𝐝𝐞𝐯𝐢𝐜𝐞 𝐦𝐚𝐫𝐤𝐞𝐭 𝐬𝐞𝐠𝐦𝐞𝐧𝐭𝐚𝐭𝐢𝐨𝐧, 𝐁𝐲 𝐏𝐫𝐨𝐝𝐮𝐜𝐭
8.1 GaN Radio Frequency Devices
8.2 Opto-semiconductors
8.3 Power Semiconductors

𝟗. 𝐏𝐨𝐰𝐞𝐫 𝐆𝐚𝐍 𝐝𝐞𝐯𝐢𝐜𝐞 𝐦𝐚𝐫𝐤𝐞𝐭 𝐬𝐞𝐠𝐦𝐞𝐧𝐭𝐚𝐭𝐢𝐨𝐧, 𝐁𝐲 𝐂𝐨𝐦𝐩𝐨𝐧𝐞𝐧𝐭
9.1 Transistor
9.2 Diode
9.3 Rectifier
9.4 Power IC
9.5 Others

𝟏𝟎. 𝐏𝐨𝐰𝐞𝐫 𝐆𝐚𝐍 𝐝𝐞𝐯𝐢𝐜𝐞 𝐦𝐚𝐫𝐤𝐞𝐭 𝐬𝐞𝐠𝐦𝐞𝐧𝐭𝐚𝐭𝐢𝐨𝐧, 𝐁𝐲 𝐖𝐚𝐟𝐞𝐫 𝐒𝐢𝐳𝐞
10.1 2-inch
10.2 4-inch
10.3 6-inch
10.4 8-inch
…….

𝟏𝟑. 𝐂𝐨𝐦𝐩𝐚𝐧𝐲 𝐏𝐫𝐨𝐟𝐢𝐥𝐞
13.1 GaN Systems Inc.
13.1.1 Market Overview
13.1.2 Financials
13.1.3 Product/Services/Offerings
13.1.4 SWOT Analysis
13.1.5 The SNS View
13.2 Toshiba Corporation
13.2.1 Market Overview
13.2.2 Financials
13.2.3 Product/Services/Offerings
13.2.4 SWOT Analysis
13.2.5 The SNS View
13.3 TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD
13.3.1 Market Overview
13.3.2 Financials
13.3.3 Product/Services/Offerings
13.3.4 SWOT Analysis
13.3.5 The SNS View
13.4 Efficient Power Conversion Corporation Inc.
13.4.1 Market Overview
13.4.2 Financials
13.4.3 Product/Services/Offerings
13.4.4 SWOT Analysis
13.4.5 The SNS View
13.5 FUJITSU limited
13.5.1 Market Overview
13.5.2 Financials
13.5.3 Product/Services/Offerings
13.5.4 SWOT Analysis
13.5.5 The SNS View
13.6 ON SEMICONDUCTOR CORPORATION
13.6.1 Market Overview
13.6.2 Financials
13.6.3 Product/Services/Offerings
13.6.4 SWOT Analysis
13.6.5 The SNS View
13.7 PANASONIC CORPORATION
13.7.1 Market Overview
13.7.2 Financials
13.7.3 Product/Services/Offerings
13.7.4 SWOT Analysis
13.7.5 The SNS View
13.8 VISIC TECHNOLOGIES LTD
13.8.1 Market Overview
13.8.2 Financials
13.8.3 Product/Services/Offerings
13.8.4 SWOT Analysis

𝐂𝐨𝐧𝐭𝐢𝐧𝐮𝐞𝐝….

𝐁𝐮𝐲 𝐒𝐢𝐧𝐠𝐥𝐞 𝐔𝐬𝐞𝐫 𝐏𝐃𝐅 @ https://www.snsinsider.com/checkout/2972

𝐂𝐨𝐧𝐭𝐚𝐜𝐭 𝐔𝐬:
Akash Anand – Head of Business Development & Strategy
info@snsinsider.com
Phone: +1-415-230-0044 (US) | +91-7798602273 (IND)

𝐀𝐛𝐨𝐮𝐭 𝐔𝐬:
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SiC Power Device Market²

GaN Diamond Semiconductor Substrates Market³

Akash Anand
SNS Insider Pvt. Ltd
+1 415-230-0044
info@snsinsider.com
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¹ https://www.snsinsider.com/reports/power-gan-device-market-2972
² https://www.snsinsider.com/reports/sic-power-device-market-3340
³ https://www.snsinsider.com/reports/gan-diamond-semiconductor-substrates-market-3072